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| MITSUBISHI SEMICONDUCTOR TRIAC BCR16UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE BCR16UM OUTLINE DRAWING Dimensions in mm 2.8 0.2 10.2 4.5 1.27 15.5 V 3.8 0.2 13.0 MIN 4.2 MAX TYPE NAME VOLTAGE CLASS 1.4 0.8 2.54 0.6 2.6 0.4 2.54 V Measurement point of IT (RMS) ...................................................................... 16A VDRM ..............................................................400V/600V IFGT !, IRGT !, IRGT # ........................................... 15mA Viso........................................................................ 1500V APPLICATION Light dimmer T1 TERMINAL T2 TERMINAL GATE TERMINAL TO-220 MAXIMUM RATINGS Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 500 12 600 720 Unit V V Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg -- Viso Parameter RMS on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine full wave 360 conduction, Tc=79C V3 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 16 170 121 5 0.5 10 2 -40 ~ +125 -40 ~ +125 4.5 case temperature Unit A A A2s W W V A C C g V Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 2.3 1500 V1. Gate open. Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) Gate non-trigger voltage Thermal resistance Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case V3 V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=25A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- Typ. -- -- -- -- -- -- -- -- -- -- Max. 2.0 1.5 1.5 1.5 1.5 15 15 15 -- 2.5 Unit mA V V V V mA mA mA V C/W V2. Measurement using the gate trigger characteristics measurement circuit. V3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case. V4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 7 5 3 2 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 102 7 5 3 2 101 7 5 3 2 100 Tj = 125C Tj = 25C 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) 3 2 VGM = 10V PG(AV) = 0.5W PGM = 5W IGM = 2A GATE VOLTAGE (V) VGT = 1.5V GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 101 7 5 3 2 100 7 5 3 2 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE IFGT I , IRGT I , IRGT III 10-1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 103 7 5 4 3 2 102 7 5 4 3 2 TYPICAL EXAMPLE TRANSIENT THERMAL IMPEDANCE (C/W) 102 2 3 5 7 103 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) MAXIMUM ON-STATE POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE ON-STATE POWER DISSIPATION (W) 40 30 360 CONDUCTION 25 RESISTIVE, INDUCTIVE 20 LOADS 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 CASE TEMPERATURE (C) 35 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE AMBIENT TEMPERATURE (C) 100 80 60 40 120 120 t2.3 100 100 t2.3 60 60 t2.3 AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 RMS ON-STATE CURRENT (A) 20 NATURAL CONVECTION 0 0 2 4 6 8 10 12 14 16 18 20 RMS ON-STATE CURRENT (A) 100 (%) REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 102 7 5 4 3 2 100 (%) HOLDING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 DISTRIBUTION + T2 , G- TYPICAL EXAMPLE BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100120 140 JUNCTION TEMPERATURE (C) LACHING CURRENT (mA) 101 7 5 3 + + 2 T2 , G - TYPICAL - T2 , G EXAMPLE 100 -40 0 40 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 80 120 160 JUNCTION TEMPERATURE (C) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) Feb.1999 MITSUBISHI SEMICONDUCTOR TRIAC BCR16UM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE 100 (%) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 103 7 5 4 3 2 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 100 (%) 160 140 TYPICAL EXAMPLE Tj = 125C I QUADRANT BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 120 100 80 60 40 20 IFGT I IRGT I TYPICAL EXAMPLE Tj = 25C III QUADRANT #2 IRGT III #1 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) GATE CURRENT PULSE WIDTH (s) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 6V V A RG 6V V A RG TEST PROCEDURE 1 6 TEST PROCEDURE 2 6V V A RG TEST PROCEDURE 3 Feb.1999 |
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